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       Low VF Low IRSMD Schottky Barrier Rectifiers Reverse V oltage: 40 Volts Forward Current: 1.0 Amp RoHS Device Page 1 REV:A CDBM140LR-G QW-BL010 Comchip Technology CO., LTD. Dimensions in inches and (millimeter) SOD-123F 0.154(3.90) 0.138(3.50) 0.012(0.30) Typ. 0.071(1.90) 0.055(1.50) 0.067(1.70) 0.051(1.30) 0.028(0.70) Typ. 0.028(0.70) Typ. A V 30 40 VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) °C °C +150 +125 -50 TSTG TJ Storage temperature Operating temperature Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 200 0.45 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 30 V , TA= 25°C IF = 1 A Maximum Ratings (at TA=25°C unless otherwise noted) Electrical Characteristics (at TA=25°C unless otherwise noted) 0.4 V 40 VDC DC Blocking voltage V 28 VRMS Maximum RMS Voltage Maximum Recurrent peak reverse voltage °C/W RθJA Thermal resistance Junction to ambient 98 -50 pF CJ Diode Junction capacitance f=1MHZ and applied 4V DC reverse voltage 200 A 1 IO Average forward current Features -Low reverse leakage current. -Guardring for over voltage protection. -Ultra high-speed switching. Mechanical data -Case: SOD-123F , molded plastic. -T erminals: solderable per MIL-STD-750, method 2026 -Polarity: Color band denotes cathode end. -W eight: 0.0004 ounces, 0.010 grams -Hight current capability ,Low forward voltage drop . -Hight surge capability . -Silicon epitaxial planar chip,metal silicon junction. |